| PART |
Description |
Maker |
| RJK6018DPK11 |
600 V - 30 A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6066DPP-M0 RJK6066DPP-M0-T2 |
Silicon N Channel MOS FET High Speed Power Switching
5 A, 600 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN
|
Renesas Electronics Corporation
|
| G3VM-61B110 G3VM61E1 |
MOS FET Relays
Analog-switching MOS FET Relay for High Analog-switching MOS FET Relay for High 2.5 kVAC between I/O.
|
Omron Electronics LLC
|
| 2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SK3053 2SK3053JM |
Nch power MOS FET MP-45F high-current switching
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK679 2SK679A 2SK679A-T 2SK679A-T/JD 2SK679A-T/JM |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS type field effect transistor
|
NEC[NEC]
Toshiba Semiconductor
|
| 2SK2112 D11232EJ2V0DS00 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
From old datasheet system
MOS Field Effect Transistor
|
NEC[NEC]
|
| TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET
N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor
ETC[ETC]
List of Unclassifed Manufacturers
|
| 2SJ541 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK2095N A5800286 |
Transistors > MOS FET > Power MOS FET
Small switching (60V, 10A)
From old datasheet system
|
ROHM[Rohm]
|
